Invention Grant
- Patent Title: Resistive random access memory cell and memory
- Patent Title (中): 电阻随机存取存储单元和存储器
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Application No.: US13512797Application Date: 2011-10-13
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Publication No.: US08642989B2Publication Date: 2014-02-04
- Inventor: Qi Liu , Ming Liu , Shibing Long , Hangbing Lv
- Applicant: Qi Liu , Ming Liu , Shibing Long , Hangbing Lv
- Applicant Address: CN Beijing
- Assignee: Institute of Microeletronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microeletronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Kinney & Lange, P.A.
- Priority: CN201110029781 20110127
- International Application: PCT/CN2011/080728 WO 20111013
- International Announcement: WO2012/100562 WO 20120802
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk.
Public/Granted literature
- US20130119341A1 RESISTIVE RANDOM ACCESS MEMORY CELL AND MEMORY Public/Granted day:2013-05-16
Information query
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