Invention Grant
US08642991B2 Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition
有权
光敏量子点，包含该组合物的组合物和使用该组合物形成量子点含有图案的方法
- Patent Title: Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition
- Patent Title (中): 光敏量子点，包含该组合物的组合物和使用该组合物形成量子点含有图案的方法
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Application No.: US12480204Application Date: 2009-06-08
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Publication No.: US08642991B2Publication Date: 2014-02-04
- Inventor: Jong-jin Park , Kwang-hee Lee , Won-jae Joo , Xavier Bulliard , Yun-hyuk Choi , Kwang-sup Lee
- Applicant: Jong-jin Park , Kwang-hee Lee , Won-jae Joo , Xavier Bulliard , Yun-hyuk Choi , Kwang-sup Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0111861 20081111; KR10-2009-0021863 20090313
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.
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