Invention Grant
- Patent Title: Light emitting device
- Patent Title (中): 发光装置
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Application No.: US13219880Application Date: 2011-08-29
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Publication No.: US08643003B2Publication Date: 2014-02-04
- Inventor: Daisuke Kumaki , Satoshi Seo
- Applicant: Daisuke Kumaki , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-278259 20040924
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00
Abstract:
An object of the present invention is to provide a light emitting element or a light emitting device that can be formed without any regard for a work function of an electrode. Another object of the invention is to provide a light emitting element or a light emitting device in that the range of choice for a material of an electrode can be widened. In an aspect of the invention, a light emitting device includes first, second and third layers between mutually-facing first and second electrodes. The first layer has a donor level. The second layer is a single layer or a laminated body containing a light emitting substance. The third layer has an acceptor level. When a potential of the second electrode is set higher than that of the first electrode, holes generated in the second layer are injected in the third layer.
Public/Granted literature
- US20110309351A1 Light Emitting Device Public/Granted day:2011-12-22
Information query
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