Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device

Invention Grant

US08643009B2 Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device 有权

Title translation: 晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法

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Patent Title: Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
Patent Title (中): 晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法
Application No.: US13602393

Application Date: 2012-09-04
Publication No.: US08643009B2

Publication Date: 2014-02-04
Inventor: Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
Applicant: Junichiro Sakata , Hiromichi Godo , Takashi Shimazu
Applicant Address: JP Atsugi-shi, Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
Agency: Robinson Intellectual Property Law Office, P.C.
Agent Eric J. Robinson
Priority: JP2009-030969 20090213
Main IPC: H01L29/786
IPC: H01L29/786

Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device

Abstract:

To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

Abstract(Chinese):

为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层，不提供硅层。

Public/Granted literature

US20120319108A1 TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE Public/Granted day:2012-12-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管