Invention Grant
US08643024B2 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
有权
非极性和半极性（Al，Ga，In）N的原位缺陷还原技术
- Patent Title: In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
- Patent Title (中): 非极性和半极性（Al，Ga，In）N的原位缺陷还原技术
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Application No.: US13331973Application Date: 2011-12-20
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Publication No.: US08643024B2Publication Date: 2014-02-04
- Inventor: Arpan Chakraborty , Kwang-Choong Kim , James S. Speck , Steven P. DenBaars , Umesh K. Mishra
- Applicant: Arpan Chakraborty , Kwang-Choong Kim , James S. Speck , Steven P. DenBaars , Umesh K. Mishra
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
Public/Granted literature
- US20120091467A1 IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N Public/Granted day:2012-04-19
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