Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
-
Application No.: US13298711Application Date: 2011-11-17
-
Publication No.: US08643026B2Publication Date: 2014-02-04
- Inventor: Masahiro Kato , Shinya Nakagawa
- Applicant: Masahiro Kato , Shinya Nakagawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-028184 20110214
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A PFC module includes: a diode bridge having first and second diodes in the upper arm, and third and fourth diodes in the lower arm; and first and second switching elements for power factor correction. The first and second diodes are Schottky barrier diodes formed by using a wide bandgap semiconductor. The third and fourth diodes, and the first and second switching elements are diodes and switching elements respectively formed by using silicon.
Public/Granted literature
- US20120206196A1 SEMICONDUCTOR MODULE Public/Granted day:2012-08-16
Information query
IPC分类:
