Invention Grant
US08643039B2 Lateral semiconductor Light Emitting Diodes having large area contacts 有权
侧向半导体发光二极管具有大面积接触

Lateral semiconductor Light Emitting Diodes having large area contacts
Abstract:
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
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