Invention Grant
US08643039B2 Lateral semiconductor Light Emitting Diodes having large area contacts
有权
侧向半导体发光二极管具有大面积接触
- Patent Title: Lateral semiconductor Light Emitting Diodes having large area contacts
- Patent Title (中): 侧向半导体发光二极管具有大面积接触
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Application No.: US13023788Application Date: 2011-02-09
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Publication No.: US08643039B2Publication Date: 2014-02-04
- Inventor: Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
- Applicant: Matthew Donofrio , James Ibbetson , Zhimin Jamie Yao
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Koppel Patrick Heybl & Philpott
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L31/12

Abstract:
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
Public/Granted literature
- US20110127568A1 LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS Public/Granted day:2011-06-02
Information query
IPC分类: