Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 Å.