Invention Grant
- Patent Title: Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode
- Patent Title (中): 半导体发光元件及其制造方法,灯,照明装置,电子设备,机械装置及电极
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Application No.: US13320105Application Date: 2010-05-11
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Publication No.: US08643046B2Publication Date: 2014-02-04
- Inventor: Takehiko Okabe , Kyosuke Masuya , Takashi Hodota
- Applicant: Takehiko Okabe , Kyosuke Masuya , Takashi Hodota
- Applicant Address: JP Aichi
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Aichi
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-117771 20090514; JP2009-176661 20090729
- International Application: PCT/JP2010/003191 WO 20100511
- International Announcement: WO2010/131458 WO 20101118
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.
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