Invention Grant
US08643075B2 Semiconductor device having glue layer and supporter 有权
具有胶层和支撑体的半导体装置

Semiconductor device having glue layer and supporter
Abstract:
A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.
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