Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles

Invention Grant

US08643100B2 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles 有权

Title translation: 场效应晶体管具有多个有效氧化物厚度和相应的多通道掺杂分布

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Patent Title: Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles
Patent Title (中): 场效应晶体管具有多个有效氧化物厚度和相应的多通道掺杂分布
Application No.: US13398255

Application Date: 2012-02-16
Publication No.: US08643100B2

Publication Date: 2014-02-04
Inventor: Akira Ito
Applicant: Akira Ito
Applicant Address: US CA Irvine
Assignee: Broadcom Corporation
Current Assignee: Broadcom Corporation
Current Assignee Address: US CA Irvine
Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L21/336

Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles

Abstract:

A FET includes a gate dielectric structure associated with a single gate electrode, the gate dielectric structure having at least two regions, each of those regions having a different effective oxide thickness, the FET further having a channel region with at least two portions each having a different doping profile. A semiconductor manufacturing process produces a FET including a gate dielectric structure associated with a single gate electrode, the gate dielectric structure having at least two regions, each of those regions having a different effective oxide thickness, the FET further having a channel region with at least two portions each having a different doping profile.

Abstract(Chinese):

FET包括与单个栅极电极相关联的栅极电介质结构，所述栅极电介质结构具有至少两个区域，每个区域具有不同的有效氧化物厚度，所述FET还具有至少两个部分的沟道区域，每个部分具有不同的掺杂特性。半导体制造工艺产生包括与单个栅极电极相关联的栅极电介质结构的FET，所述栅极电介质结构具有至少两个区域，每个区域具有不同的有效氧化物厚度，所述FET还具有至少具有沟道区域两个部分各自具有不同的掺杂分布。

Public/Granted literature

US20130214353A1 Field Effect Transistor Having Multiple Effective Oxide Thicknesses and Corresponding Multiple Channel Doping Profiles Public/Granted day:2013-08-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的