Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12308846Application Date: 2007-06-21
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Publication No.: US08643106B2Publication Date: 2014-02-04
- Inventor: Tadahiro Ohmi , Akinobu Teramoto , Cheng Weitao
- Applicant: Tadahiro Ohmi , Akinobu Teramoto , Cheng Weitao
- Applicant Address: JP Miyagi JP Ibaraki
- Assignee: National University Corporation Tohoku University,Foundation for Advancement of International Science
- Current Assignee: National University Corporation Tohoku University,Foundation for Advancement of International Science
- Current Assignee Address: JP Miyagi JP Ibaraki
- Agency: Foley & Lardner LLP
- Priority: JP2006-176945 20060627
- International Application: PCT/JP2007/062541 WO 20070621
- International Announcement: WO2008/001680 WO 20080103
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.
Public/Granted literature
- US20090250755A1 Semiconductor Device Public/Granted day:2009-10-08
Information query
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