Invention Grant
- Patent Title: Semiconductor device and electronic apparatus
- Patent Title (中): 半导体器件和电子设备
-
Application No.: US12820252Application Date: 2010-06-22
-
Publication No.: US08643114B2Publication Date: 2014-02-04
- Inventor: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
- Applicant: Takashi Aoki , Mutsumi Kimura , Takashi Nakanishi , Mariko Sakemi
- Applicant Address: JP Tokyo JP Kyoto-shi
- Assignee: Seiko Epson Corporation,Ryukoku University
- Current Assignee: Seiko Epson Corporation,Ryukoku University
- Current Assignee Address: JP Tokyo JP Kyoto-shi
- Agency: ALG Intellectual Property, LLC
- Priority: JP2009-150769 20090625
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.
Public/Granted literature
- US20100327282A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2010-12-30
Information query
IPC分类:
