Invention Grant
US08643123B2 Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
有权
制造半导体结构的方法，其用于制造分离栅极非易失性存储单元
- Patent Title: Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
- Patent Title (中): 制造半导体结构的方法，其用于制造分离栅极非易失性存储单元
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Application No.: US13085533Application Date: 2011-04-13
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Publication No.: US08643123B2Publication Date: 2014-02-04
- Inventor: Cheong M. Hong , Brian A. Winstead
- Applicant: Cheong M. Hong , Brian A. Winstead
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Mary Jo Bertani; Jonathan N. Geld
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device comprises a semiconductor substrate and a select gate structure over a first portion of the semiconductor substrate. The select gate structure comprises a sidewall forming a corner with a second portion of the semiconductor substrate and a charge storage stack over an area comprising the second portion of the semiconductor substrate, the sidewall, and the corner. A corner portion of a top surface of the charge storage stack is non-conformal with the corner, and the corner portion of the top surface of the charge storage stack has a radius of curvature measuring approximately one-third of a thickness of the charge storage stack over the second portion of the substrate or greater. A control gate layer is formed over the charge storage stack. A portion of the control gate layer conforms to the corner portion of the top surface of the charge storage stack.
Public/Granted literature
- US20120261769A1 METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT GATE NON-VOLATILE MEMORY CELL Public/Granted day:2012-10-18
Information query
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