Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13355022Application Date: 2012-01-20
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Publication No.: US08643143B2Publication Date: 2014-02-04
- Inventor: Chang Eun Lee
- Applicant: Chang Eun Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2011-0087082 20110830
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
Provided is a semiconductor device including a metal dummy pattern and a thin film resistor. In detail, a semiconductor device includes a semiconductor substrate, a thin film resistor, and a metal dummy pattern. The thin film resistor disposed over the semiconductor substrate and extending in a first direction relative to the semiconductor substrate. The metal dummy pattern disposed between the semiconductor substrate and the thin film resistor, the metal dummy pattern including a reflective pattern extending in the first direction semiconductor substrate and spatially corresponding to a periphery of the thin film resistor.
Public/Granted literature
- US20130049167A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-02-28
Information query
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