Invention Grant
US08643160B2 High voltage and high power boost converter with co-packaged Schottky diode
有权
具有共同封装的肖特基二极管的高压和高功率升压转换器
- Patent Title: High voltage and high power boost converter with co-packaged Schottky diode
- Patent Title (中): 具有共同封装的肖特基二极管的高压和高功率升压转换器
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Application No.: US13531205Application Date: 2012-06-22
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Publication No.: US08643160B2Publication Date: 2014-02-04
- Inventor: Allen Chang , Wai-Keung Peter Cheng
- Applicant: Allen Chang , Wai-Keung Peter Cheng
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/48 ; G05F1/00

Abstract:
A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20120313613A1 HIGH VOLTAGE AND HIGH POWER BOOST CONVETER WITH CO-PACKAGED SCHOTTKY DIODE Public/Granted day:2012-12-13
Information query
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