Invention Grant
- Patent Title: Semiconductor device having double side electrode structure
- Patent Title (中): 具有双面电极结构的半导体器件
-
Application No.: US13176256Application Date: 2011-07-05
-
Publication No.: US08643161B2Publication Date: 2014-02-04
- Inventor: Hidenori Hasegawa
- Applicant: Hidenori Hasegawa
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2007-185710 20070717
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A semiconductor device includes a package substrate having a front surface and a backside surface; an electrode pad formed on the front surface; an outer connection pad formed on the backside surface and electrically connected to the electrode pad; a semiconductor chip mounted on the front surface and having an electrode electrically connected to the electrode pad; a sealing resin layer having a through hole formed with a die-molding and reaching the electrode pad for sealing the semiconductor chip; and a through electrode filled in the through hole with a conductive material and having one end portion electrically connected to the electrode pad and the other end portion exposed from the sealing resin layer.
Public/Granted literature
- US20110260334A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-10-27
Information query
IPC分类: