Invention Grant
US08643179B2 Bump structure including nano-wires and a body connecting ends of the nano-wires, semiconductor package having the bump structure and method of manufacturing the semiconductor package
有权
包括纳米线和连接纳米线端部的本体的凸起结构，具有凸起结构的半导体封装以及半导体封装的制造方法
- Patent Title: Bump structure including nano-wires and a body connecting ends of the nano-wires, semiconductor package having the bump structure and method of manufacturing the semiconductor package
- Patent Title (中): 包括纳米线和连接纳米线端部的本体的凸起结构，具有凸起结构的半导体封装以及半导体封装的制造方法
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Application No.: US13240302Application Date: 2011-09-22
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Publication No.: US08643179B2Publication Date: 2014-02-04
- Inventor: Yun-Hyeok Im , Jong-Yeon Kim , Tae-Je Cho , Un-Byoung Kang
- Applicant: Yun-Hyeok Im , Jong-Yeon Kim , Tae-Je Cho , Un-Byoung Kang
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2010-0114476 20101117
- Main IPC: H01L23/485
- IPC: H01L23/485
Abstract:
Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.
Public/Granted literature
- US20120119359A1 BUMP STRUCTURE AND SEMICONDUCTOR PACKAGE HAVING THE BUMP STRUCTURE Public/Granted day:2012-05-17
Information query
IPC分类:
