Invention Grant
- Patent Title: Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material
- Patent Title (中): 半导体装置，半导体装置的制造方法以及接合材料
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Application No.: US12246811Application Date: 2008-10-07
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Publication No.: US08643185B2Publication Date: 2014-02-04
- Inventor: Ryoichi Kajiwara , Kazutoshi Itou , Hiroi Oka , Takuya Nakajo , Yuichi Yato
- Applicant: Ryoichi Kajiwara , Kazutoshi Itou , Hiroi Oka , Takuya Nakajo , Yuichi Yato
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2007-264412 20071010
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/60 ; H01B1/22
Abstract:
A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead.
Public/Granted literature
- US20090096100A1 SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS, AND JOINT MATERIAL Public/Granted day:2009-04-16
Information query
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