Invention Grant
- Patent Title: Nickel tin bonding system for semiconductor wafers and devices
- Patent Title (中): 用于半导体晶圆和器件的镍锡焊接系统
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Application No.: US11428158Application Date: 2006-06-30
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Publication No.: US08643195B2Publication Date: 2014-02-04
- Inventor: David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
- Applicant: David B. Slater, Jr. , John A. Edmond , Hua-Shuang Kong
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the contact metal layer that predominates by weight in nickel and tin.
Public/Granted literature
- US20080003777A1 Nickel Tin Bonding System for Semiconductor Wafers and Devices Public/Granted day:2008-01-03
Information query
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