Invention Grant
US08643756B2 Solid-state image-sensing device having a plurality of controlled pixels, with each pixel having a transfer gate signal that is ternary-voltage signal switched among three levels, and method of operating same
有权
具有多个受控像素的固态图像感测装置，其中每个像素具有在三个电平之间切换的三进制电压信号的传输门信号及其操作方法
- Patent Title: Solid-state image-sensing device having a plurality of controlled pixels, with each pixel having a transfer gate signal that is ternary-voltage signal switched among three levels, and method of operating same
- Patent Title (中): 具有多个受控像素的固态图像感测装置，其中每个像素具有在三个电平之间切换的三进制电压信号的传输门信号及其操作方法
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Application No.: US13488057Application Date: 2012-06-04
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Publication No.: US08643756B2Publication Date: 2014-02-04
- Inventor: Shigehiro Miyatake , Tomokazu Kakumoto
- Applicant: Shigehiro Miyatake , Tomokazu Kakumoto
- Applicant Address: JP Tokyo
- Assignee: Knoica Minolta Holdings, Inc.
- Current Assignee: Knoica Minolta Holdings, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Cozen O'Connor
- Priority: JP2004-198114 20040705; JP2005-100432 20050331
- Main IPC: H04N5/335
- IPC: H04N5/335
Abstract:
By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
Public/Granted literature
- US20120235023A1 Solid-State Image-Sensing Device and Camera Provided Therewith Public/Granted day:2012-09-20
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