Invention Grant
US08643757B2 Method of producing solid state imaging device with optimized locations of internal electrical components 失效
制造具有内部电气部件优化位置的固态成像装置的方法

  • Patent Title: Method of producing solid state imaging device with optimized locations of internal electrical components
  • Patent Title (中): 制造具有内部电气部件优化位置的固态成像装置的方法
  • Application No.: US12461932
    Application Date: 2009-08-28
  • Publication No.: US08643757B2
    Publication Date: 2014-02-04
  • Inventor: Hideo Kanbe
  • Applicant: Hideo Kanbe
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Rader, Fishman & Grauer PLLC
  • Priority: JP2005-217624 20050727; JP2005-220939 20050729
  • Main IPC: H04N3/14
  • IPC: H04N3/14 H04N5/335
Method of producing solid state imaging device with optimized locations of internal electrical components
Abstract:
A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as to overlap the second electrode, and method of producing the same and a camera.
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