Invention Grant
- Patent Title: Method of producing solid state imaging device with optimized locations of internal electrical components
- Patent Title (中): 制造具有内部电气部件优化位置的固态成像装置的方法
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Application No.: US12461932Application Date: 2009-08-28
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Publication No.: US08643757B2Publication Date: 2014-02-04
- Inventor: Hideo Kanbe
- Applicant: Hideo Kanbe
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2005-217624 20050727; JP2005-220939 20050729
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335

Abstract:
A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as to overlap the second electrode, and method of producing the same and a camera.
Public/Granted literature
- US20090317936A1 Solid state imaging device, method of producing the same and camera relating to same Public/Granted day:2009-12-24
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