Invention Grant
- Patent Title: Inspection method for inspecting defects of wafer surface
- Patent Title (中): 检查晶圆表面缺陷的检查方法
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Application No.: US13599479Application Date: 2012-08-30
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Publication No.: US08643836B1Publication Date: 2014-02-04
- Inventor: Hsin-Yi Tsai , Kuo-Cheng Huang , Ya-Cheng Liu , Min-Wei Hung
- Applicant: Hsin-Yi Tsai , Kuo-Cheng Huang , Ya-Cheng Liu , Min-Wei Hung
- Applicant Address: TW Taipei
- Assignee: National Applied Research Laboratories
- Current Assignee: National Applied Research Laboratories
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
The present invention provides an inspection method for inspecting defects of wafer surface. The method includes: encircling peripheral region of the wafer surface by a first light source set and a second light source set; using a control module to control the first light source set and the second light source set to irradiate the light alternately from different directions; using an image pick-up module to receive a scattered light image during each time when the first light source set or the second light source set irradiates the light on the wafer surface; and then using a process module to obtain an enhanced and clear defect image of wafer surface by processing each of the scattered light images.
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