Invention Grant
- Patent Title: MEMS device and method of manufacturing MEMS device
- Patent Title (中): MEMS器件及制造MEMS器件的方法
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Application No.: US13178480Application Date: 2011-07-07
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Publication No.: US08643927B2Publication Date: 2014-02-04
- Inventor: Chisaki Takubo , Heewon Jeong
- Applicant: Chisaki Takubo , Heewon Jeong
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-181108 20100812
- Main IPC: G02B26/08
- IPC: G02B26/08

Abstract:
A protrusion formation hole is provided so as to pierce a support substrate. A polysilicon film as an electrical conducting material is embedded in the protrusion formation hole through an oxide silicon film. The polysilicon film partially bulges out of the protrusion formation hole toward a movable section to form a protruding section. In other words, the polysilicon film bulges out of the protrusion formation hole toward the movable section to form the protruding section. Thereby, a movable section included in MEMS can be prevented from sticking to other members.
Public/Granted literature
- US20120038963A1 MEMS DEVICE AND METHOD OF MANUFACTURING MEMS DEVICE Public/Granted day:2012-02-16
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