Invention Grant
- Patent Title: Semiconductor memory device and control method of the same
- Patent Title (中): 半导体存储器件及其控制方法相同
-
Application No.: US13230156Application Date: 2011-09-12
-
Publication No.: US08644051B2Publication Date: 2014-02-04
- Inventor: Kazushige Kanda
- Applicant: Kazushige Kanda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-067010 20090318
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
According to one embodiment, a semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, and a data input/output circuit includes a first address buffer and a second address buffer configured to store a first address and a second address of the plurality of memory cells, and a controller configured to perform control to time-divisionally output the first address and the second address to a first address bus and a second address bus in data input/output.
Public/Granted literature
- US20120002457A1 SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD OF THE SAME Public/Granted day:2012-01-05
Information query