Invention Grant
- Patent Title: Memory semiconductor device and method of operating the same
- Patent Title (中): 存储器半导体器件及其操作方法
-
Application No.: US13107206Application Date: 2011-05-13
-
Publication No.: US08644064B2Publication Date: 2014-02-04
- Inventor: Byungkyu Cho , Changhyun Lee , Sunghoi Hur
- Applicant: Byungkyu Cho , Changhyun Lee , Sunghoi Hur
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0048194 20100524
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.
Public/Granted literature
- US20110286266A1 MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2011-11-24
Information query
