A non-volatile memory device includes a plurality of memory cells, with each memory cell for storing a bit having a first logic value or a second logic value. An input is for receiving a word defined by bits to be stored in the plurality of memory cells. Programming circuitry is for programming a corresponding memory cell for each bit having the first logic value. Forming circuitry is for receiving the word from the input and for providing to the programming circuitry at least one additional word defined by bits to also be stored in the plurality of memory cells. The forming circuitry includes processing circuitry for calculating a current maximum number of simultaneously programmable bits, and logic circuitry for generating the additional word, with the additional word having a number of bits having the first logic value equal to the current maximum number.