A semiconductor memory device selecting a half page based on a particular bit of a row address includes: an input unit for receiving the particular bit; a control signal generation unit for outputting a mode control signal in response to a signal related to a mode for selecting a whole page; first and second mode control units for transferring first and second output signals of the input unit corresponding to the particular bit and its inverse signal; a row precharge pulse generation unit for generating a row precharge pulse enabled in an initial period of a precharge duration; a first driving unit for pull-up/pull-down driving an output terminal corresponding to a first pre-decoding signal; a second driving unit for pull-up/pull-down driving an output terminal corresponding to a second pre-decoding signal; and first and second latch units for latching output signals of the first and second driving units.