Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13926098Application Date: 2013-06-25
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Publication No.: US08644090B2Publication Date: 2014-02-04
- Inventor: Binhaku Taruishi , Hiroki Miyashita , Ken Shibata , Masashi Horiguchi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi JP Mobara-shi
- Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee: Renesas Electronics Corporation,Hitachi Device Engineering Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi JP Mobara-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP11-245821 19990831
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A data input buffer is changed from an inactive to an active state after the reception of instruction for a write operation effected on a memory unit. The input buffer is a differential input buffer having interface specs based on SSTL, for example, which is brought to an active state by turning on a power switch to cause a through current to flow and receives a signal therein while immediately following a small change in small-amplitude signal. Since the input buffer is brought to the active state only when the write operation's instruction for the memory unit is provided, it is rendered inactive in advance before the instruction is provided, whereby wasteful power consumption is reduced. In another aspect, power consumption is reduced by changing from the active to the inactive state in a time period from a write command issuing to a next command issuing.
Public/Granted literature
- US20130286753A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-31
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