Invention Grant
US08644198B2 Split-band power amplifiers and duplexers for LTE-advanced front end for improved IMD
有权
用于LTE高级前端的分频功率放大器和双工器,用于改进IMD
- Patent Title: Split-band power amplifiers and duplexers for LTE-advanced front end for improved IMD
- Patent Title (中): 用于LTE高级前端的分频功率放大器和双工器,用于改进IMD
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Application No.: US13045621Application Date: 2011-03-11
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Publication No.: US08644198B2Publication Date: 2014-02-04
- Inventor: Nadim Khlat , Alexander Wayne Hietala
- Applicant: Nadim Khlat , Alexander Wayne Hietala
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H04B7/00
- IPC: H04B7/00

Abstract:
A front end radio architecture (FERA) is disclosed that includes a transmitter block coupled to a power amplifier (PA) via first and second input terminals. A first split-band duplexer is coupled to a first output terminal of the PA and a second split-band duplexer is coupled to a second output terminal of the PA. The PA includes a first amplifier cell and a second amplifier cell that when coupled to the first and second split-band duplexers makes up first and second transmitter chains. Only one of the first and the second transmitter chains is active when a first carrier and a second carrier have a frequency offset that is less than an associated half duplex frequency within a same split-band duplex band, thus preventing third order inter-modulation (IMD) products from falling within an associated receive channel. Otherwise, the first and the second transmitter chains are both active.
Public/Granted literature
- US20110222444A1 SPLIT-BAND POWER AMPLIFIERS AND DUPLEXERS FOR LTE-ADVANCED FRONT END FOR IMPROVED IMD Public/Granted day:2011-09-15
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