Invention Grant
- Patent Title: Semiconductor manufacturing apparatus
- Patent Title (中): 半导体制造装置
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Application No.: US13059297Application Date: 2008-09-29
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Publication No.: US08644665B2Publication Date: 2014-02-04
- Inventor: Yoshiaki Ogino , Katsumi Kimura , Yasuhiro Iida , Kazuhiro Soga
- Applicant: Yoshiaki Ogino , Katsumi Kimura , Yasuhiro Iida , Kazuhiro Soga
- Applicant Address: JP Yokohama-shi, Kanagawa-ken
- Assignee: Hitachi Information & Telecommunication Engineering, Ltd.
- Current Assignee: Hitachi Information & Telecommunication Engineering, Ltd.
- Current Assignee Address: JP Yokohama-shi, Kanagawa-ken
- Agency: Bacon & Thomas, PLLC
- International Application: PCT/JP2008/067684 WO 20080929
- International Announcement: WO2010/035348 WO 20100401
- Main IPC: H01S3/30
- IPC: H01S3/30 ; G02B6/10 ; G02B6/036

Abstract:
To project a rectangular laser spot having a predetermined size and a high laser power density onto the surface of an object, a semiconductor manufacturing apparatus comprises a control unit for controlling power of a laser light source, an optical waveguide unit (1) including a core section (10) transmitting laser light and a clad section (11) covering the core section (10), and a lens (3) for forming the laser light output through the optical waveguide unit (1) into a laser spot having a predetermined shape, an output end surface (15) of the core section (10) has a rectangular shape with one side length of 1 μm to 20 μm and the other side length of 1 mm to 60 mm, and the laser source is set to make the power density of the laser spot output from the core section (10) to be 0.1 mW/μm2 or more.
Public/Granted literature
- US20110140007A1 SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2011-06-16
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