Invention Grant
US08645613B2 Data writing method for flash memory and control circuit and storage system using the same 有权
闪存和控制电路的数据写入方法及其使用的存储系统

  • Patent Title: Data writing method for flash memory and control circuit and storage system using the same
  • Patent Title (中): 闪存和控制电路的数据写入方法及其使用的存储系统
  • Application No.: US12554347
    Application Date: 2009-09-04
  • Publication No.: US08645613B2
    Publication Date: 2014-02-04
  • Inventor: Kheng-Chong Tan
  • Applicant: Kheng-Chong Tan
  • Applicant Address: TW Miaoli
  • Assignee: Phison Electronics Corp.
  • Current Assignee: Phison Electronics Corp.
  • Current Assignee Address: TW Miaoli
  • Agency: J.C. Patents
  • Priority: TW98122621A 20090703
  • Main IPC: G06F12/02
  • IPC: G06F12/02
Data writing method for flash memory and control circuit and storage system using the same
Abstract:
A data writing method for a flash memory and a control circuit and a storage system using the same are provided. The data writing method includes determining whether the size of data to be stored by a host system is smaller than a predetermined value according to a write command received from the host system, when the size of the data is smaller than the predetermined value, the data is written into a corresponding buffer physical block or a corresponding spare buffer physical block. The data writing method further includes combining valid data belonging to the same logical block during the executions of several write commands. Accordingly, the response time during the execution of each write command is shortened, and the problem of timeout is avoided.
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