Invention Grant
US08645884B2 Multi-layer memory structure for behavioral modeling in a pre-distorter 有权
用于预失真器中的行为建模的多层内存结构

Multi-layer memory structure for behavioral modeling in a pre-distorter
Abstract:
A method and system for modeling distortion of a non-linear electronic device are disclosed. According to one aspect, the invention provides a layered memory structure that includes a plurality of memory structure layers. Each memory structure layer has an input to receive an input signal and has a memory function. Each memory function has at least one delay element that provides a pre-determined delay of the input signal of the memory structure layer. The pre-determined delay is different for each of at least two memory structure layers and is based at least in part on an evaluation period corresponding to the memory structure layer.
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