Invention Grant
US08645884B2 Multi-layer memory structure for behavioral modeling in a pre-distorter
有权
用于预失真器中的行为建模的多层内存结构
- Patent Title: Multi-layer memory structure for behavioral modeling in a pre-distorter
- Patent Title (中): 用于预失真器中的行为建模的多层内存结构
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Application No.: US13492190Application Date: 2012-06-08
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Publication No.: US08645884B2Publication Date: 2014-02-04
- Inventor: Chunlong Bai
- Applicant: Chunlong Bai
- Applicant Address: SE Stockholm
- Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee: Telefonaktiebolaget L M Ericsson (publ)
- Current Assignee Address: SE Stockholm
- Agency: Christopher & Weisberg, P.A.
- Main IPC: G06F9/455
- IPC: G06F9/455 ; G06F17/50

Abstract:
A method and system for modeling distortion of a non-linear electronic device are disclosed. According to one aspect, the invention provides a layered memory structure that includes a plurality of memory structure layers. Each memory structure layer has an input to receive an input signal and has a memory function. Each memory function has at least one delay element that provides a pre-determined delay of the input signal of the memory structure layer. The pre-determined delay is different for each of at least two memory structure layers and is based at least in part on an evaluation period corresponding to the memory structure layer.
Public/Granted literature
- US20130241645A1 MULTI-LAYER MEMORY STRUCTURE FOR BEHAVIORAL MODELING IN A PRE-DISTORTER Public/Granted day:2013-09-19
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