Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US12443484Application Date: 2007-10-01
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Publication No.: US08647440B2Publication Date: 2014-02-11
- Inventor: Shigeru Kawamura , Teruyuki Hayashi
- Applicant: Shigeru Kawamura , Teruyuki Hayashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-269304 20060929
- International Application: PCT/JP2007/069206 WO 20071001
- International Announcement: WO2008/038823 WO 20080403
- Main IPC: B08B6/00
- IPC: B08B6/00 ; B08B3/00 ; B08B5/00

Abstract:
Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.
Public/Granted literature
- US20100043820A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2010-02-25
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