A polishing composition contains a vanadate such as ammonium vanadate, sodium vanadate, and potassium vanadate and an oxygen donor such as hydrogen peroxide and ozone. It is preferable that the polishing composition further contains at least either one of abrasive grains and a pH adjusting agent. The polishing composition can be suitably used for polishing a silicon carbide wafer such as a hexagonal silicon carbide single crystal wafer.