Invention Grant
- Patent Title: Oxide sintered body and sputtering target
- Patent Title (中): 氧化物烧结体和溅射靶
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Application No.: US13119838Application Date: 2009-09-14
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Publication No.: US08647537B2Publication Date: 2014-02-11
- Inventor: Futoshi Utsuno , Kazuyoshi Inoue , Hirokazu Kawashima , Masashi Kasami , Koki Yano , Kota Terai
- Applicant: Futoshi Utsuno , Kazuyoshi Inoue , Hirokazu Kawashima , Masashi Kasami , Koki Yano , Kota Terai
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miller, White, Zelano & Branigan, P.C.
- Priority: JP2008-241644 20080919; JP2009-043153 20090225
- International Application: PCT/JP2009/004569 WO 20090914
- International Announcement: WO2010/032422 WO 20100325
- Main IPC: H01B1/02
- IPC: H01B1/02
Abstract:
An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
Public/Granted literature
- US20110180763A1 OXIDE SINTERED BODY AND SPUTTERING TARGET Public/Granted day:2011-07-28
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