Invention Grant
- Patent Title: Photoactive compound gradient photoresist
- Patent Title (中): 光敏化合物梯度光刻胶
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Application No.: US13192113Application Date: 2011-07-27
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Publication No.: US08647796B2Publication Date: 2014-02-11
- Inventor: Chen-Hua Yu , Chung-Shi Liu , Hung-Jui Kuo
- Applicant: Chen-Hua Yu , Chung-Shi Liu , Hung-Jui Kuo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G03F7/00
- IPC: G03F7/00

Abstract:
A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.
Public/Granted literature
- US20130026644A1 Photoactive Compound Gradient Photoresist Public/Granted day:2013-01-31
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