Invention Grant
US08647817B2 Vapor treatment process for pattern smoothing and inline critical dimension slimming
有权
蒸汽处理过程，用于图案平滑和直线临界尺寸减肥
- Patent Title: Vapor treatment process for pattern smoothing and inline critical dimension slimming
- Patent Title (中): 蒸汽处理过程，用于图案平滑和直线临界尺寸减肥
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Application No.: US13342313Application Date: 2012-01-03
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Publication No.: US08647817B2Publication Date: 2014-02-11
- Inventor: Shannon W. Dunn , Dave Hetzer
- Applicant: Shannon W. Dunn , Dave Hetzer
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.
Public/Granted literature
- US20130171571A1 VAPOR TREATMENT PROCESS FOR PATTERN SMOOTHING AND INLINE CRITICAL DIMENSION SLIMMING Public/Granted day:2013-07-04
Information query
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