Invention Grant
- Patent Title: Inline process control structures
- Patent Title (中): 内联过程控制结构
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Application No.: US12907620Application Date: 2010-10-19
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Publication No.: US08647892B2Publication Date: 2014-02-11
- Inventor: Kai-Chih Liang , Wen-Chuan Tai , Chun-Ren Cheng
- Applicant: Kai-Chih Liang , Wen-Chuan Tai , Chun-Ren Cheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/66
Abstract:
A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.
Public/Granted literature
- US20120091454A1 INLINE PROCESS CONTROL STRUCTURES Public/Granted day:2012-04-19
Information query
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