Invention Grant
- Patent Title: Method for generating graphene structures
- Patent Title (中): 生成石墨烯结构的方法
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Application No.: US13726834Application Date: 2012-12-26
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Publication No.: US08647894B2Publication Date: 2014-02-11
- Inventor: Sandip Niyogi , Sean Barstow
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/20

Abstract:
A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.
Public/Granted literature
- US20130323863A1 Method for Generating Graphene Structures Public/Granted day:2013-12-05
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