Invention Grant
- Patent Title: Process for producing a substrate for a liquid ejection head
- Patent Title (中): 用于制造液体喷射头基板的方法
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Application No.: US13411896Application Date: 2012-03-05
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Publication No.: US08647896B2Publication Date: 2014-02-11
- Inventor: Toshiyasu Sakai
- Applicant: Toshiyasu Sakai
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2011-051669 20110309
- Main IPC: B44C1/22
- IPC: B44C1/22 ; G11B5/127

Abstract:
Provided is a process for producing a substrate for a liquid ejection head, including forming a liquid supply port in a silicon substrate, the process including the steps of (a) forming an etch stop layer at a portion of a front surface of the silicon substrate at which portion the liquid supply port is to be formed; (b) performing dry etching using a Bosch process from a rear surface side of the silicon substrate up to the etch stop layer with use of an etching mask formed on a rear surface of the silicon substrate to thereby form the liquid supply port; and (c) simultaneously removing the etch stop layer and a deposition film formed inside the liquid supply port.
Public/Granted literature
- US20120231565A1 PROCESS FOR PRODUCING A SUBSTRATE FOR A LIQUID EJECTION HEAD Public/Granted day:2012-09-13
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