Invention Grant
- Patent Title: LED device and method for manufacturing the same
- Patent Title (中): LED装置及其制造方法
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Application No.: US13339198Application Date: 2011-12-28
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Publication No.: US08647898B2Publication Date: 2014-02-11
- Inventor: Chao-Hsiung Chang
- Applicant: Chao-Hsiung Chang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: CN201110147464 20110602
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided.
Public/Granted literature
- US20120305961A1 LED DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-12-06
Information query
IPC分类:
