Invention Grant
- Patent Title: Method for manufacturing a light emitting device
- Patent Title (中): 制造发光器件的方法
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Application No.: US13959834Application Date: 2013-08-06
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Publication No.: US08647906B2Publication Date: 2014-02-11
- Inventor: Masatsugu Ichikawa
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-Shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP2009-285971 20091217
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacturing a light emitting device, the method including: disposing a semiconductor light emitting element including a semiconductor layer that emits a primary light on a mounting substrate; covering the semiconductor light emitting element with a transparent medium containing fluorescent material particles that absorb a part of the primary light and emits a secondary light having a wavelength longer than that of the primary light and scattering particles having a mean particle size D that satisfies the inequality 20 nm
Public/Granted literature
- US20130316478A1 LIGHT EMITTING DEVICE Public/Granted day:2013-11-28
Information query
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