Invention Grant
US08647908B2 Semiconductor pressure sensor and method of manufacturing semiconductor pressure sensor
有权
半导体压力传感器及半导体压力传感器的制造方法
- Patent Title: Semiconductor pressure sensor and method of manufacturing semiconductor pressure sensor
- Patent Title (中): 半导体压力传感器及半导体压力传感器的制造方法
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Application No.: US13413846Application Date: 2012-03-07
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Publication No.: US08647908B2Publication Date: 2014-02-11
- Inventor: Eiji Yoshikawa , Shinichi Izuo
- Applicant: Eiji Yoshikawa , Shinichi Izuo
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-237485 20111028
- Main IPC: H01L21/62
- IPC: H01L21/62 ; H01L29/84
Abstract:
A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.
Public/Granted literature
- US20130105922A1 SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING SEMICONDUCTOR PRESSURE SENSOR Public/Granted day:2013-05-02
Information query
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