Invention Grant
US08647911B2 Backside contact solar cell with formed polysilicon doped regions
有权
背面接触太阳能电池,形成多晶硅掺杂区域
- Patent Title: Backside contact solar cell with formed polysilicon doped regions
- Patent Title (中): 背面接触太阳能电池,形成多晶硅掺杂区域
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Application No.: US13547405Application Date: 2012-07-12
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Publication No.: US08647911B2Publication Date: 2014-02-11
- Inventor: David D. Smith
- Applicant: David D. Smith
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Okamoto & Benedicto LLP
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
Public/Granted literature
- US20120276685A1 BACKSIDE CONTACT SOLAR CELL WITH FORMED POLYSILICON DOPED REGIONS Public/Granted day:2012-11-01
Information query
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