Invention Grant
US08647947B2 Semiconductor device including a MOS transistor and production method therefor
有权
包括MOS晶体管的半导体器件及其制造方法
- Patent Title: Semiconductor device including a MOS transistor and production method therefor
- Patent Title (中): 包括MOS晶体管的半导体器件及其制造方法
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Application No.: US13917040Application Date: 2013-06-13
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Publication No.: US08647947B2Publication Date: 2014-02-11
- Inventor: Fujio Masuoka , Shintaro Arai
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Peninsula Plaza
- Assignee: Unisantis Electronics Singapore Pte Ltd.
- Current Assignee: Unisantis Electronics Singapore Pte Ltd.
- Current Assignee Address: SG Peninsula Plaza
- Agency: Brinks Gilson & Lione
- Priority: JP2009-109126 20090428
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; a bottom doped region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the semiconductor pillar through a first dielectric film therebetween; and a top doped region formed so as to at least partially overlap a top surface of the semiconductor pillar, wherein the top doped region has a top surface having an area greater than that of the top surface of the semiconductor pillar.
Public/Granted literature
- US20130273703A1 SEMICONDUCTOR DEVICE INCLUDING A MOS TRANSISTOR AND PRODUCTION METHOD THEREFOR Public/Granted day:2013-10-17
Information query
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