Invention Grant
- Patent Title: Method for making semi-conductor nanocrystals
- Patent Title (中): 制造半导体纳米晶体的方法
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Application No.: US13464363Application Date: 2012-05-04
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Publication No.: US08647957B2Publication Date: 2014-02-11
- Inventor: Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
- Applicant: Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives,Centre National de la Recherche Scientifique
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives,Centre National de la Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1153927 20110506
- Main IPC: B82Y40/00
- IPC: B82Y40/00
Abstract:
A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
Public/Granted literature
- US20120282758A1 METHOD FOR MAKING SEMI-CONDUCTOR NANOCRYSTALS Public/Granted day:2012-11-08
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