Invention Grant
- Patent Title: Temporary wafer bonding method for semiconductor processing
- Patent Title (中): 半导体处理的临时晶圆接合方法
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Application No.: US13583007Application Date: 2010-12-15
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Publication No.: US08647964B2Publication Date: 2014-02-11
- Inventor: Brian Harkness
- Applicant: Brian Harkness
- Applicant Address: US MI Midland
- Assignee: Dow Corning Corporation
- Current Assignee: Dow Corning Corporation
- Current Assignee Address: US MI Midland
- Agency: Dow Corning Corporation
- Agent Claude F. Purchase; Erika Takeuchi
- International Application: PCT/US2010/060416 WO 20101215
- International Announcement: WO2011/100030 WO 20110818
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A method for temporary wafer bonding employs a curable adhesive composition and a degradation agent combined with the curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a base. The film prepared by curing the composition is degradable and removable by heating.
Public/Granted literature
- US20130023109A1 Temporary Wafer Bonding Method for Semiconductor Processing Public/Granted day:2013-01-24
Information query
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