Invention Grant
- Patent Title: Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
- Patent Title (中): 具有低碱金属浓度的六方纤锌矿型外延层及其制造方法
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Application No.: US12474143Application Date: 2009-05-28
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Publication No.: US08647967B2Publication Date: 2014-02-11
- Inventor: Makoto Saito , Shin-Ichiro Kawabata , Derrick S. Kamber , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: Makoto Saito , Shin-Ichiro Kawabata , Derrick S. Kamber , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.
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