Invention Grant
US08647974B2 Method of fabricating a semiconductor chip with supportive terminal pad
有权
用支撑端子焊盘制造半导体芯片的方法
- Patent Title: Method of fabricating a semiconductor chip with supportive terminal pad
- Patent Title (中): 用支撑端子焊盘制造半导体芯片的方法
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Application No.: US13072554Application Date: 2011-03-25
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Publication No.: US08647974B2Publication Date: 2014-02-11
- Inventor: Roden R. Topacio , Michael Z. Su , Neil McLellan
- Applicant: Roden R. Topacio , Michael Z. Su , Neil McLellan
- Applicant Address: CA Markham US CA Sunnyvale
- Assignee: ATI Technologies ULC,Advanced Micro Devices, Inc.
- Current Assignee: ATI Technologies ULC,Advanced Micro Devices, Inc.
- Current Assignee Address: CA Markham US CA Sunnyvale
- Agent Timothy M. Honeycutt
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48
Abstract:
Various semiconductor chip input/output structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor chip that has a first conductor pad and a passivation structure. A second conductor pad is fabricated around but not in physical contact with the first conductor pad to leave a gap. The second conductor pad is adapted to protect a portion of the passivation structure.
Public/Granted literature
- US20120241985A1 SEMICONDUCTOR CHIP WITH SUPPORTIVE TERMINAL PAD Public/Granted day:2012-09-27
Information query
IPC分类:
